Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package

Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • Pb−Free P

文件：195.58 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package

Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • Pb−Free P

文件：195.58 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package

Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • Pb−Free P

文件：195.58 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package

Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • Pb−Free P

文件：195.58 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Protected Power MOSFET

文件：72.39 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

PROTECTED POWER MOSFET

文件：66.65 Kbytes 页数：6 Pages

ONSEMI

安森美半导体