Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package

Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • Pb−Free P

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ONSEMI

安森美半导体

SOP-8

NOVOSENSE/纳芯微

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WDFN6

ON

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WDFN6

ON

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