NIF9N05ACLT1G中文资料安森美半导体数据手册PDF规格书

Benefits

• High Energy Capability for Inductive Loads

• Low Switching Noise Generation

特性 Features

• Diode Clamp Between Gate and Source

• ESD Protection − HBM 5000 V

• Active Over−Voltage Gate to Drain Clamp

• Scalable to Lower or Higher RDS(on)

• Internal Series Gate Resistance

• Pb−Free Packages are Available

Applications

• Automotive and Industrial Markets:

Solenoid Drivers, Lamp Drivers, Small Motor Drivers