IGBT - Field Stop II / 4 Lead

文件：162.87 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

IGBT - Field Stop II / 4 Lead

文件：162.87 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Package：TO-247-4；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT FIELD STOP 650V 200A TO247

ONSEMI

安森美半导体

IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features • Extremely Efficient Trench w

文件：378.65 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

Field Stop and trench IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.0V@IC= 75A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Induction Heating,UPS ·AC & DC motor controls and general purpose inverters

文件：393.88 Kbytes 页数：4 Pages

ISC

无锡固电

IGBT

文件：246.31 Kbytes 页数：11 Pages

ONSEMI

安森美半导体