NGTB30N60FLWG

IGBT, 600 V, 30 A, FS1 Solar/UPS; • Low Saturation Voltage using Trench with Field Stop Technology\n• Low Switching Loss Reduces System Power Dissipation\n• Soft Fast Reverse Recovery Diode\n• Optimized for High Speed Switching\n• 5µs Short Circuit Capability\n;

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

NGTB30N60FLWG

Insulated Gate Bipolar Transistor (IGBT)

NGTB30N60FLWG

Package：TO-247-3；包装：散装 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 60A 250W TO247

NGTB30N60FWG

InsulatedGateBipolarTransistor(IGBT)

NGTB30N60IHLWG

InsulatedGateBipolarTransistor(IGBT)

NGTB30N60IHLWG

IGBT