Insulated Gate Bipolar Transistor (IGBT)

文件：180.9 Kbytes 页数：10 Pages

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安森美半导体

IGBT

文件：139.87 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

IGBT

文件：139.87 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

IGBT，场截止 (FS)，30 A，600 V

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in damanding switching applications, offering both low on state voltage and minimal switching loss.The IGBT is well suited for half bridge resonan Low Saturation Voltage using Trench with Fieldstop Technology\nLow Conduction Loss\nLow Switching Loss\nReduces System Power Dissipation;

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安森美半导体

Package：TO-247-3；包装：散装 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 30A TO247

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安森美半导体