| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformance.IntendedforuseinCompactFluorescentLights | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
PowerMOStransistorIsolatedversionofPHP1N60E GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinafullpack,plasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePow | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=1.3A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.0Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600VN-ChannelEnhancementModeMOSFET | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
600VN-ChannelEnhancementModeMOSFET | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •UninterruptiblePowerSup | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMIL |
2022+ |
168 |
全新原装 货期两周 |
询价 | |||
Eaton |
22+ |
NA |
168 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
24+ |
N/A |
57000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
lipoo(立浦) |
2447 |
156*200mm |
115000 |
1个/袋一级代理专营品牌!原装正品,优势现货,长期排 |
询价 | ||
lipoo(立浦) |
2021+ |
156*200mm |
499 |
询价 | |||
LIPOO立浦 |
23+ |
156*200mm |
22820 |
原装正品，支持实单 |
询价 | ||
lipoo(立浦) |
24+ |
156x200mm |
8215 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ATHEROS |
1304PB |
BGA |
100 |
询价 | |||
EATON |
20+ |
连接器 |
963 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
奥普士OPTEX |
23+ |
27500 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
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