600V N-Channel Enhancement Mode MOSFET

文件：239.1 Kbytes 页数：5 Pages

PANJIT

強茂

600V N-Channel Enhancement Mode MOSFET

Panjit

強茂

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO

文件：156.53 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Sup

文件：2.6729 Mbytes 页数：7 Pages

KERSEMI

iscN-Channel MOSFET Transistor

文件：333.46 Kbytes 页数：2 Pages

ISC

无锡固电