首页 >NEZ1414-8D>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
14.0-14.5GHz,8WInternallyMatchedPowerFET | Excelics Excelics | Excelics | ||
14.0-14.5GHz8-WattInternallyMatchedPowerFET | Excelics Excelics | Excelics | ||
InternallyMatchedPowerGaAsFET | EUDYNAEudyna Devices Inc eudyna Devices Inc | EUDYNA | ||
8WX,Ku-BANDPOWERGaAsMESFET DESCRIPTION TheNEZ1011-8EandNEZ1414-8EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhighoutputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwithonlya50Ωexternalcircuit.Toreducethermalresistancethedevic | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
GaAsMESFET DESCRIPTION TheNEZ1414-8EispowerGaAsFETwhichprovideshigh gain,highefficiencyandhighoutputpowerinKu-band. Theinternalinputandoutputmatchingenablesguaranteed performancetobeachievedwithonlya50Wexternal circuit. Toreducethermalresistance,thedevicehasaPHS | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MICROWAVEPOWERGaAsFET FEATURES ■LOWINTERMODULATIONDISTORTION IM3=-45dBcatPout=28.0dBm SingleCarrierLevel ■HIGHPOWERP1dB=39.5dBmat14.0GHzto14.5GHz ■HIGHGAING1dB=5.0dBat14.0GHzto14.5GHz ■BROADBANDINTERNALLYMATCHEDFET ■HERMETICALLYSEALEDPACKAGE | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
MICROWAVEPOWERGaAsFET FEATURES ■LOWINTERMODULATIONDISTORTION IM3=-45dBcatPout=28.0dBm SingleCarrierLevel ■HIGHPOWERP1dB=39.5dBmat14.0GHzto14.5GHz ■HIGHGAING1dB=5.0dBat14.0GHzto14.5GHz ■BROADBANDINTERNALLYMATCHEDFET ■HERMETICALLYSEALEDPACKAGE | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
NEC-日本电气 |
24+25+/26+27+ |
TO-59.高频管 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
NEC |
23+ |
220 |
现货供应 |
询价 | |||
EUDYNA |
27035 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||||
NEC |
91 |
FlatPack-2P |
17 |
询价 | |||
NEC |
6000 |
面议 |
19 |
FlatPack-2P |
询价 |
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