1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the the

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NEC

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1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

Renesas

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KEMETKEMET Corporation

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