High-speed dual-differential comparator/sense amp

FEATURES • 12 ns maximum guaranteed propagation delay • 20 µA maximum input bias current • TTL compatible strobes and outputs • Large common-mode input voltage range • Operates from standard supply voltages APPLICATIONS • MOS memory sense amp • A-to-D conversion • High-speed line receiver

文件：96.02 Kbytes 页数：8 Pages

PHI

飞利浦

High?뭆peed Dual?묭ifferential Comparator/Sense Amp

文件：123.78 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Dual Differential Comparator/Sense Amp

NE521 is a high-speed, dual-differential, comparator/sense amp. • 12 ns Maximum Guaranteed Propagation Delay\n• 20 µA Maximum Input Bias Current\n• TTL-Compatible Strobes and Outputs\n• Large Common-Mode Input Voltage Range\n• Operates from Standard Supply Voltages;

ONSEMI

安森美半导体

High-speed dual-differential comparator/sense amp

恩XP

恩智浦

Transimpedance amplifier 280MHz

DESCRIPTION The NE5210 is a 7kΩ transimpedance wide band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber-optic receivers. The part is ideally suited for many other RF applications as a general purpose gain block. FEATURES • Low noise: 3.5pA/√Hz

文件：175.96 Kbytes 页数：14 Pages

PHI

飞利浦

Transimpedance amplifier 280MHz

DESCRIPTION The NE5210 is a 7kΩ transimpedance wide band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber-optic receivers. The part is ideally suited for many other RF applications as a general purpose gain block. FEATURES • Low noise: 3.5pA/√Hz

文件：175.96 Kbytes 页数：14 Pages

PHI

飞利浦

GaAs HETEROJUNCTION BIPOLAR TRANSISTOR

L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES · For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) · 4-pin super minimold

文件：203.75 Kbytes 页数：14 Pages

RENESAS

瑞萨

L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

FEATURES • HIGH POWER GAIN: GA = 15 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • OIP3 = 15 dBm TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • 4 PIN SUPER MINI MOLD PACKAGE • GROUNDED EMITT

文件：63.89 Kbytes 页数：12 Pages

NEC

瑞萨

L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

FEATURES • HIGH POWER GAIN: GA = 15 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • OIP3 = 15 dBm TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • 4 PIN SUPER MINI MOLD PACKAGE • GROUNDED EMITT

文件：63.89 Kbytes 页数：12 Pages

NEC

瑞萨

丝印：V41；GaAs HETEROJUNCTION BIPOLAR TRANSISTOR

L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES · For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) · 4-pin super minimold

文件：203.75 Kbytes 页数：14 Pages

RENESAS

瑞萨