HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP.

文件：199.83 Kbytes 页数：18 Pages

RENESAS

瑞萨

X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB T

文件：65.23 Kbytes 页数：16 Pages

NEC

瑞萨

SUPER LOW NOISE HJ FET

DESCRIPTION NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low n

文件：252.15 Kbytes 页数：7 Pages

CEL

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

Renesas

瑞萨

SUPER LOW NOISE HJ FET

CEL

Package：4-SMD；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：HJ-FET 13DB S01

CEL

Package：4-SMD；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：HJ-FET 13DB S01

CEL