C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain

文件：79.09 Kbytes 页数：12 Pages

NEC

瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF =

文件：193.76 Kbytes 页数：14 Pages

RENESAS

瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF =

文件：193.76 Kbytes 页数：14 Pages

RENESAS

瑞萨

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain

文件：79.09 Kbytes 页数：12 Pages

NEC

瑞萨

SUPER LOW NOISE HJ FET

DESCRIPTION NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low n

文件：252.15 Kbytes 页数：7 Pages

CEL

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP.

文件：199.83 Kbytes 页数：18 Pages

RENESAS

瑞萨

X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB T

文件：65.23 Kbytes 页数：16 Pages

NEC

瑞萨

X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB T

文件：65.23 Kbytes 页数：16 Pages

NEC

瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP.

文件：199.83 Kbytes 页数：18 Pages

RENESAS

瑞萨

SUPER LOW NOISE HJ FET

DESCRIPTION NECS NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low n

文件：252.15 Kbytes 页数：7 Pages

CEL