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NE3513M04-T2

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NE3513M04-T2

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NE3513M04-T2

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

CEL

California Eastern Labs

NE3513M04-T2-A

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

CEL

California Eastern Labs

NE3513M04-T2B

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

CEL

California Eastern Labs

NE3513M04-T2B

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NE3513M04-T2B

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NE3513M04-T2B-A

N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

CEL

California Eastern Labs

NE3513M04-T2-A

Package:SOT-343F;包装:托盘 类别:分立半导体产品 晶体管 - FET,MOSFET - 射频 描述:FET RF 4V 12GHZ M04 4SMD

CEL

California Eastern Labs

NE3513M04-T2B-A

Package:4-SMD,扁平引线;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - FET,MOSFET - 射频 描述:FET RF 4V 12GHZ M04 4SMD

CEL

California Eastern Labs

详细参数

  • 型号:

    NE3513M04-T2

  • 制造商:

    California Eastern Laboratories(CEL)

  • 功能描述:

    SUPER LOW NOISE PSEUDOMORPHIC HJ FET, ROHS COMPLIANT - Tape and Reel

  • 功能描述:

    IC HJ-FET RF N-CH LNA M04 4SMD

供应商型号品牌批号封装库存备注价格
RENESAS
23+
SOT343
580000
询价
RENESAS
2016+
PIN4
15000
只做原装,假一罚十,公司可开17%增值税发票!
询价
RENESAS
23+
SOT343
8560
受权代理!全新原装现货特价热卖!
询价
RENESAS
18+
4SMD
85600
保证进口原装可开17%增值税发票
询价
RENESAS/瑞萨
24+
PIN4
9600
原装现货,优势供应,支持实单!
询价
RENESAS/瑞萨
21+
SOT-343
10000
全新原装 公司现货 价格优
询价
RENESAS/瑞萨
23+
SOT343
8160
原厂原装
询价
RENESAS/瑞萨
23+
SOT343
50000
全新原装正品现货,支持订货
询价
RENESAS/瑞萨
21+
SOT343
10000
原装现货假一罚十
询价
RENESAS/瑞萨
23+
SOT-343
98500
原装正品,支持实单
询价
更多NE3513M04-T2供应商 更新时间2025-5-31 14:01:00