NPN SILICON RF TRANSISTOR

DESCRIPTION: The ASI NE02135 is Designed for Oscillator and Amplifier Applications up to 2.0 GHz. FEATURES INCLUDE: • High insertion gain. • High power gain. • Low Noise figure

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ASI

HIGH INSERTION GAIN: 18.5 dB at 500 MHz

DESCRIPTION NECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The ser

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CEL

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

[CEL] DESCRIPTION NECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styl

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NPN SILICON RF TRANSISTOR

DESCRIPTION:\nThe ASI NE02135 is Designed for Oscillator and Amplifier Applications up to 2.0 GHz.FEATURES INCLUDE:\n• High insertion gain.\n• High power gain.\n• Low Noise figure

ASI Semiconductor