NDP6050中文资料仙童半导体数据手册PDF规格书
NDP6050规格书详情
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
特性 Features
■ 48A, 50V. RDS(ON) = 0.025Ω @ VGS=10V.
■ Critical DC electrical parameters specified at elevated temperature.
■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
■ 175°C maximum junction temperature rating.
■ High density cell design for extremely low RDS(ON).
■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
产品属性
- 型号：
NDP6050
- 功能描述：
MOSFET DISC BY MFG 2/02
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
国半 |
25+ |
TO-220 |
10000 |
原装现货假一罚十 |
询价 | ||
NS |
2223+ |
NA |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
NS |
2023+ |
TO-220 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
FAIRCHILD |
24+ |
原装进口原厂原包接受订货 |
646 |
原装现货假一罚十 |
询价 | ||
NS |
23+ |
NA |
2569 |
全新原装假一赔十 |
询价 | ||
NS/国半 |
97+ |
TO-220 |
270 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
NS |
23+ |
TR3 |
65480 |
询价 | |||
ON |
26+ |
TO-220 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
NS |
22+ |
DC97 PACKAGE TUBE |
20000 |
公司只做原装 品质保障 |
询价 |
