Fast Recovery Diode

Fast Recovery Diode FEATURES ■Double Side Cooling ■High Surge Capability ■Low Recovery Charge APPLICATIONS ■Induction Heating ■A.C. Motor Drives ■Inverters And Choppers ■Welding ■High Frequency Rectification ■UPS

文件：57.49 Kbytes 页数：7 Pages

Dynex

Fast Recovery Diode

Fast Recovery Diode FEATURES ■Double Side Cooling ■High Surge Capability ■Low Recovery Charge APPLICATIONS ■Induction Heating ■A.C. Motor Drives ■Inverters And Choppers ■Welding ■High Frequency Rectification ■UPS

文件：57.49 Kbytes 页数：7 Pages

Dynex

2.54mm Pitch Bottom Entry Type Connector

■ Features 1. Board to Board Size Freely Settable The board to board size can be set at infinite stages, according to the header pin through type structure and the diverse header variation. The board to board size can be set at infinite stages. 2. Integrity of Parts Mounted Surface The

文件：284.19 Kbytes 页数：7 Pages

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.5A@ TC=25℃ ·Drain Source Voltage -VDSS=1500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =10.5Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.83 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=0.1A@ TC=25℃ ·Drain Source Voltage -VDSS=1500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =150Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.65 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET 600 V, 4.0 

文件：168.55 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET 600 V, 4.8 

文件：146.41 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

文件：148.07 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

文件：148.07 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

文件：148.07 Kbytes 页数：10 Pages

ONSEMI

安森美半导体