NCP81085中文资料Dual MOSFET Gate Driver数据手册ONSEMI规格书

描述 Description

The NCP81085 is a high performance dual MOSFET gate driver optimized to drive the gates of both high and low side power MOSFETs in a synchronous buck converter. The NCP81085 uses an on−chip bootstrap diode to eliminate the external discrete diode. A high floating top driver design can accommodate HB voltage as high as 180 V. The low−side and high−side are independently controlled and match to 4 ns between the turn−on and turn−off of each other. Independent Under−Voltage lockout is provided for the high side and low side driver forcing the output low when the drive voltage is below a specific threshold.

特性 Features

• WDFN9 (MT) Package
• Compliant with IPC-9592B pin spacing requirements
• Floating Top Driver Accommodates Boost Voltage up to 180 V
• Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration
• Switching Frequency up to 1 MHz
• 20 ns Propagation Delay Times
• 4 A Sink, 4 A Source Output Currents
• 8 ns Rise / 7 ns Fall Times with 1000 pF Load
• UVLO Protection
• Specified from −40°C to 140°C
• Pb−Free, Halogen Free/BFR Free and is RoHS Compliant

应用 Application

• Class D Audio Amplifiers
• Two Switch and Active Clamp Forward Converters
• Telecom and Datacom
• Isolated Non−Isolated Power Supply Architectures
• Class D Audio Amplifiers

简介

NCP81085属于集成电路（IC）的栅极驱动器。由制造生产的NCP81085栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。