NCP81075中文资料高压侧和低压侧门极驱动器，高频率，180 V，4A 能力数据手册ONSEMI规格书

描述 Description

The NCP81075 is a high performance dual mosfet (high side and low side) gate-drive IC designed for high-voltage, high-speed, driving MOSFETs operating up to 180 V. The NCP81075 integrates a driver IC and a bootstrap diode and offers drive capability up to 4A.The high side and low side drivers are independently controlled with a matched typical propagation delay of 3.5ns.

This driver is ideally suited for use in high voltage buck applications, isolated power supplies,2 switch and active clamp forward converters. the device can also be used in solar optimizer and solar inverter applications.

The part is offered in a SO8, 8 pin DFN, and 10 pin DFN package and fully specified from -40C to 140C.

特性 Features

• Drives two N-Channel MOSFETs in High & Low Side
• Integrated Bootstrap Diode for High Side Gate Drive
• Bootstrap Supply Voltage Range up to 180V
• 4A Source, 4A Sink Output Current Capability
• Drives 1nF Load with Typical Rise/Fall Times of 8ns/7 ns
• Wide Supply Voltage Range 8.5V to 20V
• Fast Propagation Delay Times (Typ. 20 ns)
• 2 ns Delay Matching (Typical)
• Under-Voltage Lockout (UVLO) Protection for Drive Voltage
• Operating Junction Temperature Range of -40°C to 140°C

应用 Application

• Buck converter
• isolated power supplies
• Class D audio amplifier
• Two switch and Active Clamp Forward Converters
• Solar optimizer

简介

NCP81075属于集成电路（IC）的栅极驱动器。由制造生产的NCP81075栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。