Dual MOSFET Gate Driver, High Performance

Features • Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration • Floating Top Driver Accommodates Boost Voltage up to 180 V • Switching Frequency up to 1 MHz • 20 ns Propagation Delay Times • 4 A Sink, 4 A Source Output Currents • 8 ns Rise / 7 ns Fall Times with 1000 pF Lo

文件：232 Kbytes 页数：11 Pages

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Dual MOSFET Gate Driver

The NCP81085 is a high performance dual MOSFET gate driver optimized to drive the gates of both high and low side power MOSFETs in a synchronous buck converter. The NCP81085 uses an on−chip bootstrap diode to eliminate the external discrete diode. A high floating top driver design can accommodate HB • WDFN9 (MT) Package\n• Compliant with IPC-9592B pin spacing requirements\n• Floating Top Driver Accommodates Boost Voltage up to 180 V\n• Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration\n• Switching Frequency up to 1 MHz\n• 20 ns Propagation Delay Times\n• 4 A Sink, 4 A Source ;

ONSEMI

安森美半导体

Dual MOSFET Gate Driver, High Performance

Features • Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration • Floating Top Driver Accommodates Boost Voltage up to 180 V • Switching Frequency up to 1 MHz • 20 ns Propagation Delay Times • 4 A Sink, 4 A Source Output Currents • 8 ns Rise / 7 ns Fall Times with 1000 pF Lo

文件：232 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

Package：9-WDFN 裸露焊盘；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：HIGH PERFORMANCE DUAL MOSFET GAT

ONSEMI

安森美半导体