NCP81080中文资料High Side and Low Side Gate Driver, High-Frequency, 180V offering 0.5A source/0.8A capability数据手册ONSEMI规格书

描述 Description

The NCP81080 is a high performance dual mosfet (high side and low side) gate-drive IC designed for driving MOSFETs operating up to 180 V. The NCP81080 integrates a driver IC and a bootstrap diode and offers 0.5A source/0.8A sink driving capability. Anti-cross conduction circuit is integrated to prevent shoot through issues.The high side and low side drivers are independently controlled.

This driver is ideally suited for use in high voltage buck and motor control applications.

The part is offered in a SO8 and 8 pin 2mm by 2mm DFN package and fully specified from -40C to 140C.

特性 Features

• Drives two N-Channel MOSFETs in High & Low Side
• Bootstrap Supply Voltage Range up to 180V
• Drives 1nF Load with Typical Rise/Fall Times of 19ns/17 ns
• 2 ns Delay Matching (Typical)
• Operating Junction Temperature Range of -40°C to 140°C

应用 Application

• Buck converter
• isolated power supplies
• Class D audio amplifier
• Two switch and Active Clamp Forward Converters
• Motors

简介

NCP81080属于集成电路（IC）的栅极驱动器。由制造生产的NCP81080栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。