NCE N-Channel Enhancement Mode Power MOSFET

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NCEPOWER

新洁能

N沟道 MOSFET

NCEPower

新洁能

N沟道 MOSFET

\n The NCE80H16WD uses advanced trench technology and\n design to provide excellent R DS(ON)  with low gate charge. It\n can be used in a wide variety of applications. \n• V DS =80V,I D =160A\nR DS(ON) <4.5m? @ V GS =10V\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process technology for high ESD capabili;

NCEPower

新洁能

N沟道 MOSFET

NCEPower

新洁能