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NCE30D2519K中文资料Complementary MOSFET数据手册NCEPower规格书
NCE30D2519K规格书详情
描述 Description
The NCE30D2519K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
特性 Features
N channel
• VDS =30V,I D =25A
RDS(ON) <12m? @ V GS =10V
RDS(ON) <18m? @ V GS =4.5V
P channel
• V DS =-30V,I D =-19A
RDS(ON) <35m? @ V GS =-10V
RDS(ON) <65m? @ V GS =-4.5V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Good stability and uniformity with high E AS
• Excellent package for good heat dissipation
• Special process technology for high ESD capability
应用 Application
• H-bridge
• Inverters
技术参数
- 制造商编号
：NCE30D2519K
- 生产厂家
：NCEPower
- Product status
：Production
- Package
：TO-252-4L
- Polarity
：N+P
- BVDSS(V)
：-30/30
- ID(A)
：-19/25
- VTH(V)
：-1.9/1.5
- RDS(ON)@10VTyp(mΩ)
：29/9.5
- RDS(ON)@10VMax(mΩ)
：35/12
- RDS(ON)@4.5VTyp(mΩ)
：48/12
- RDS(ON)@4.5VMax(mΩ)
：65/15
- VGS(th)(V)
：±20
- CISS(pF)
：920/450
- QG(nC)
：16.2/9.5
- PD(W)
：21
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NCE(无锡新洁能) |
2024+ |
TO-252-4 |
12973 |
诚信服务,绝对原装原盘 |
询价 | ||
NCE/新洁能 |
24+ |
SOT-252 |
21 |
绝对原厂原装,长期优势可定货 |
询价 | ||
NCE |
24+ |
TO-252 |
8000 |
原装，正品 |
询价 | ||
NCE/新洁能 |
25+ |
TO-252-4L |
60000 |
全新原装现货特价销售,欢迎来电查询 |
询价 | ||
NCE新洁能 |
25+ |
TO-252-4L |
30061 |
原厂原装,价格优势 |
询价 | ||
NCE |
23+ |
TO-252 |
30000 |
正规渠道,只有原装! |
询价 | ||
NCE新洁能 |
22+ |
TO-252-4L |
95000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
询价 | ||
NEC |
25+ |
TO-252-4 |
188600 |
全新原厂原装正品现货 欢迎咨询 |
询价 | ||
NCE/新洁能 |
23+ |
TO-252-4 |
25000 |
原装正品，实单请联系 |
询价 | ||
NCE/新洁能 |
24+ |
TO-252-4L |
50000 |
专营NCE新洁能原装保障 |
询价 |
