订购数量 | 价格 |
---|---|
1+ |
首页>NAND512W3A2DN6E>芯片详情
NAND512W3A2DN6E 集成电路(IC)存储器 STMICROELECTRONICS/意法半导体
- 详细信息
- 规格书下载
产品参考属性
- 类型
描述
- 产品编号:
NAND512W3A2DN6E
- 制造商:
Micron Technology Inc.
- 类别:
- 包装:
管件
- 存储器类型:
非易失
- 存储器格式:
闪存
- 技术:
闪存 - NAND
- 存储容量:
512Mb(64M x 8)
- 存储器接口:
并联
- 写周期时间 - 字,页:
50ns
- 电压 - 供电:
2.7V ~ 3.6V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
48-TFSOP(0.724",18.40mm 宽)
- 供应商器件封装:
48-TSOP
- 描述:
IC FLASH 512MBIT PARALLEL 48TSOP
供应商
相近型号
- NAND512R3A2SZA6E
- NAND512W3A2SNXE
- NAND512R3A2DZA6E
- NAND512W3A2SZA6E
- NAND512R3A2DZA6
- NAND98R3M0AZBB5
- NAND32GAHAKZ06
- NAND98R3M0CZBB5
- NAND256W3A2BZA6
- NANDA8R3N0AZBB5
- NAND256W3A2BNXE
- NANDA9R3N4BZBB5
- NAND256W3A2BN6F
- NANDA9R3N6CZBB5E
- NAND256W3A2BN6E
- NANDA9R3NOAP4C5
- NAND256W3A2BE06
- NANDAAR4N4AZBA5E
- NAND225AQA9PZC5
- NANDBAR4N0AZB5
- NAND128W3A2BN6E
- NANDBBR4E5BP4R5
- NAND128W3A2BN6
- NANDC3R4N5AZCC5
- NAND04GW3C2BN6E
- NANO100SD3AN-AG
- NAND04GW3B2DN6E
- NANO100SD3BN
- NAND02GW3B2DZA6E
- NANO100SE3BN
- NAND02GW3B2DZA6
- NANO102SC2AN
- NAND02GW3B2DN6
- NANO110SE3BN
- NAND02GW3B2CN6E
- NANO112SC2AN
- NAND02GW382DN6
- NANO120LE3BN
- NAND02GR3B2DZA6E
- NANO120SE3BN
- NAND01GW3B2CN6E
- NANO130SE3BN
- NAND01GW3B2CN6
- NANOASMDC012F-2
- NAND01GW3B2BN6F
- NANOASMDC016F-2
- NAND01GW3B2BN6E
- NANOSMD050F/13.2-2
- NAND01GW3B2BN6
- NANOSMD075F-2