首页 >NAND01GR4B2C>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NAND01GR4B2C | 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 文件:1.6385 Mbytes 页数:67 Pages | NUMONYX | NUMONYX | |
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 文件:1.6385 Mbytes 页数:67 Pages | NUMONYX | NUMONYX | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 文件:1.6385 Mbytes 页数:67 Pages | NUMONYX | NUMONYX | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 文件:1.6385 Mbytes 页数:67 Pages | NUMONYX | NUMONYX | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 文件:1.6385 Mbytes 页数:67 Pages | NUMONYX | NUMONYX | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 文件:1.6385 Mbytes 页数:67 Pages | NUMONYX | NUMONYX | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 文件:1.6385 Mbytes 页数:67 Pages | NUMONYX | NUMONYX | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 文件:1.6385 Mbytes 页数:67 Pages | NUMONYX | NUMONYX | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 文件:1.6385 Mbytes 页数:67 Pages | NUMONYX | NUMONYX | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 文件:1.6385 Mbytes 页数:67 Pages | NUMONYX | NUMONYX |
详细参数
- 型号:
NAND01GR4B2C
- 制造商:
Micron Technology Inc
- 功能描述:
NAND
- 功能描述:
NAND - Gel-pak, waffle pack, wafer, diced wafer on film
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
BGA |
3000 |
原装正品假一罚百!可开增票! |
询价 | ||
ST |
25+ |
TSSOP |
108 |
普通 |
询价 | ||
ST |
2023+环保现货 |
BGA |
7500 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
询价 | ||
ST/意法 |
23+ |
TSSOP48 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
STM |
23+ |
TSSOP48 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
MICRON |
25+ |
TSSOP |
10000 |
原装现货假一罚十 |
询价 | ||
ST/意法 |
23+ |
TSOP48 |
20000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
STM |
1146+ |
TSSOP48 |
129 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
STM |
23+ |
TSSOP48 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
STM |
24+ |
TSSOP48 |
5000 |
全新原装正品,现货销售 |
询价 |
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