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NAND01GR4B2CZA6F

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYX

numonyx

NAND01GR4B2CZA6F

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

NAND01GR4B2CZA6F

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

NUMONYX

numonyx

NAND01GR4B2CZA6

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

NAND01GR4B2CZA6E

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYX

numonyx

NAND01GR4B2CZA6E

1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory

NUMONYX

numonyx

NAND01GR4B2CZA6E

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    NAND01GR4B2CZA6F

  • 制造商:

    NUMONYX

  • 制造商全称:

    Numonyx B.V

  • 功能描述:

    1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

供应商型号品牌批号封装库存备注价格
ST
23+
BGA
3000
原装正品假一罚百!可开增票!
询价
STM
24+
原厂封装
6843
原装现货
询价
ST
10+
TSSOP
108
普通
询价
ST
21+
TSSOP
23480
询价
ST
2023+环保现货
BGA
7500
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
STM
2016+
TSSOP48
6523
只做原装正品现货!或订货!
询价
MICRON
19+
TSSOP
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
ST
24+
TSOP-48
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
ST/意法
23+
TSSOP48
50000
全新原装正品现货,支持订货
询价
STM
23+
TSSOP48
50000
全新原装正品现货,支持订货
询价
更多NAND01GR4B2CZA6F供应商 更新时间2025-5-6 16:48:00