ISL9016IRUFBZ-T

Marking：N8；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mADualLDOwithLowNoise,HighPSRR,andLowIQ ISL9016isahighperformancedualLDOcapableofprovidingupto150mAcurrentoneachchannel.ItfeaturesalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto4.7µFwithanESRofupto200mΩ. Features •

MM5Z9V1

Marking：N8；Package：SOD-539；Zener Diode

Features ●Highreliability ●ZenerVoltage2.0V~75V

PBSS2515VPN

Marking：N8；Package：SOT666；15 V low VCE(sat) NPN/PNP transistor

FEATURES •300mWtotalpowerdissipation •Verysmall1.6×1.2mmultrathinpackage •Excellentcoplanarityduetostraightleads •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improvedthermalbehaviourduetoflatlead •ReplacestwoSC75/SC89packagedlowVCEsattrans

PBSS2515YPN

Marking：N8；Package：TSSOP6；15 V low VCEsat NPN/PNP transistor

1.Generaldescription NPN/PNPlowVCEsattransistorpairinaSOT363(SC-88)verysmallSurface-MountedDevice (SMD)plasticpackage.. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapability •ReplacestwoSC-70packagedlowVCEsattransistorsonsam

PBSS2515YPN-Q

Marking：N8；Package：TSSOP6；15 V low VCEsat NPN/PNP transistor

1.Generaldescription NPN/PNPlowVCEsattransistorpairinaSOT363(SC-88)verysmallSurface-MountedDevice (SMD)plasticpackage.. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapability •ReplacestwoSC-70packagedlowVCEsattransistorsonsam

PESD5Z3.3

Marking：N8；Package：SOD523；Low capacitance unidirectional ESD protection diodes

1.Generaldescription LowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodeinaSOD523 (SC-79)ultrasmallandflatleadSurface-MountedDevice(SMD)plasticpackagedesignedto protectonesignallinefromthedamagecausedbyESDandothertransients. 2.Featuresan

PESD5Z3.3-Q

Marking：N8；Package：SC-79；Low capacitance unidirectional ESD protection diode

1.Generaldescription LowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodeinaSOD523 (SC-79)ultrasmallandflatleadSurface-MountedDevice(SMD)plasticpackage,designedto protectonesignallinefromthedamagecausedbyESDandothertransients. 2.Featuresa

TLV70728APDQNR

Marking：N8；Package：X2SON；TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1Features •Typicalaccuracy:0.5% •Supports200-mAoutput •LowIQ:25μA •Fixed-outputvoltagecombinationspossiblefrom 0.85Vto5.0V(1) •HighPSRR: –70dBat100Hz –50dBat1MHz •Stablewitheffectivecapacitanceof0.1μF(2) •Thermalshutdownandovercurrentprotec

TLV70728APDQNR

Marking：N8；Package：X2SON；TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1Features •Typicalaccuracy:0.5% •Supports200-mAoutput •LowIQ:25μA •Fixed-outputvoltagecombinationspossiblefrom 0.85Vto5.0V(1) •HighPSRR: –70dBat100Hz –50dBat1MHz •Stablewitheffectivecapacitanceof0.1μF(2) •Thermalshutdownandovercurrentprotec

DTC118

Marking：N8；Package：SOT-23；Bias Resistor Transistor