N6001NZ-S29-AY规格书应用电路批发采购瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
N6001NZ	文件：262.28 Kbytes Page：8 Pages	N-channel MOSFET 600V, 1A, 9.3Ω Description The N6001NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 9.3Ω MAX. (VGS = 10 V, ID = 0.5 A) • Low input capacitance Ciss = 215pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±1.0 文件：262.28 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
N6001NZ-S29-AY	文件：262.28 Kbytes Page：8 Pages	N-channel MOSFET 600V, 1A, 9.3Ω Description The N6001NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 9.3Ω MAX. (VGS = 10 V, ID = 0.5 A) • Low input capacitance Ciss = 215pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±1.0 文件：262.28 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
N6002NZ	文件：280.89 Kbytes Page：8 Pages	N-channel MOSFET 600V, 2A, 4.4Ω Description The N6002NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.4Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low input capacitance Ciss = 400pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±2.0 文件：280.89 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
N6002NZ-S29-AY	文件：280.89 Kbytes Page：8 Pages	N-channel MOSFET 600V, 2A, 4.4Ω Description The N6002NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.4Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low input capacitance Ciss = 400pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±2.0 文件：280.89 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
N6003NZ	文件：280.47 Kbytes Page：8 Pages	N-channel MOSFET 600V, 2A, 4.4Ω Description The N6003NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.4Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low input capacitance Ciss = 400pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±2.0 文件：280.47 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
N6003NZ-S17-AY	文件：280.47 Kbytes Page：8 Pages	N-channel MOSFET 600V, 2A, 4.4Ω Description The N6003NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.4Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low input capacitance Ciss = 400pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±2.0 文件：280.47 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
N6004NZ	文件：264.73 Kbytes Page：8 Pages	N-channel MOSFET 600V, 4A, 2.0Ω Description The N6004NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 2.0Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low input capacitance Ciss = 900pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±4.0 文件：264.73 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
N6004NZ-S17-AY	文件：264.73 Kbytes Page：8 Pages	N-channel MOSFET 600V, 4A, 2.0Ω Description The N6004NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 2.0Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low input capacitance Ciss = 900pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±4.0 文件：264.73 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
N6006NZ	文件：260.45 Kbytes Page：8 Pages	N-channel MOSFET 600V, 6A, 1.2Ω Description The N6006NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A) • Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±6.0 文件：260.45 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
N6006NZ-S17-AY	文件：260.45 Kbytes Page：8 Pages	N-channel MOSFET 600V, 6A, 1.2Ω Description The N6006NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A) • Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±6.0 文件：260.45 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市壹芯创科技有限公司	N6001NZ-S29-AY	RENESAS	24+		1000	只做原装!公司现货库存!QQ:2369405325	询价
深圳市易讯博科技有限公司	N-600-2	Bivar	22+	NA	3284	加我QQ或微信咨询更多详细信息,	询价
深圳市威尔健半导体有限公司	N6002NZ	RENESAS/瑞萨	23+	TO-251	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	N6002NZ	RENESAS/瑞萨	25+	TO-251	10000	原装现货假一罚十	询价
深圳市晨豪科技有限公司	N6002NZ	RENESAS/瑞萨	23+	TO-251	89630	当天发货全新原装现货	询价
深圳市博中泰实业有限公司	N6002NZ	RENESAS/瑞萨	24+	TO-251	60000		询价
深圳市正迈科技有限公司	N6002NZ-S29-AY	RENESAS丨全系列供应	23+	RENESAS丨全系列供应	122948	原厂授权代理分销现货只做原装正迈科技样品支持现货	询价
深圳市莱克讯科技有限公司	N6002NZ-S29-AY	RENESAS	1923+	NA	7880	原盒原包装现货原装假一罚十价优	询价
深圳市正纳电子有限公司	N6002NZ-S29-AY	Renesas(瑞萨)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市安富世纪电子有限公司	N6002NZ-S29-AY	RENESAS	23+	TO251	50000	全新原装正品现货,支持订货	询价

更多N600供应商更新时间2026-3-13 16:10:00

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