PESD3V3S1UB

Marking：N5；Package：SOD-523；Unidirectional ESD protection of one line

Generaldescription UnidirectionalESDprotectiondiodein aSOD523plasticpackagedesigned toprotectonetransmissionordata linefromthedamagecausedbyESD (ElectroStaticDischarge)andother transients. Features UnidirectionalESDprotectionofoneline Max.peakpulsepower:P

PMZB290UNE

Marking：N5；Package：DFN1006-3L；N-Channel Enhancement Mode MOSFET

Features| VDS=20v| +RDS(ON)=300mQ(typ.)@VGS=2.5V| +RDS(ON)=250mQ(typ.)@VGS=4.5V| +ESDProtectedupto2KV|

TLV707335ADQNR

Marking：N5；Package：X2SON；TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1Features •Typicalaccuracy:0.5 •Supports200-mAoutput •LowIQ:25μA •Fixed-outputvoltagecombinationspossiblefrom 0.85Vto5.0V(1) •HighPSRR: –70dBat100Hz –50dBat1MHz •Stablewitheffectivecapacitanceof0.1μF(2) •Thermalshutdownandovercurrentprotection

2SC1654

Marking：N5；Package：SOT-23；Silicon Epitaxial Planar Transistor

BZX584B20V

Marking：N5；Package：SOD-523；Zener Diode

FP6802-39NS3G

Marking：N5；Package：SOT-23-3；High-Precision Voltage Detector with Ultra-Low Quiescent Current

FTK235NSOT883

Marking：N5；Package：SOT-883；30 V, single N-channel Trench MOSFET

LM1012N3

Marking：N5；Package：SOT883；N-Channel Enhancement Mode Power MOSFET

LM1D07N02K

Marking：N5；Package：DFN1006-3；N-Channel Enhancement Mode Power MOSFET

LM3043N

Marking：N5；Package：SOT883；N-Channel Trench MOSFET