BFG540-X

Marking：N43；Package：SOT-143B；NPN SILICON RF TRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V，IC=40mA，f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V，IC=10mA，f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V，IC=40mA，f=1GHz

BFG540-XR

Marking：N49；Package：SOT-143B；NPN SILICON RF TRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V，IC=40mA，f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V，IC=10mA，f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V，IC=40mA，f=1GHz

DMN4030LK3Q-13

Marking：N4030L；Package：TO252；40V N-CHANNEL ENHANCEMENT MODE MOSFET

FeaturesandBenefits LowOn-Resistance FastSwitchingSpeed Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN4030LK3Qissuitableforautomotiveapplications requiringspecificchangecontrol;thispartisAEC-Q101 qualified,PPAPcap

NVG450A120L5DSC

Marking：N412DSC；Package：AHPM15-CEA；Automotive 1200 V, 450 A Dual Side Cooling Half-Bridge Power Module VE-Trac Dual

ProductDescription TheNVG450A120L5DSCisamemberoftheVE−TracDualpower modulefamilywithdualsidecoolingandcompactfootprintsfor Hybrid(HEV)andElectricVehicle(EV)tractioninverterapplication. Themoduleconsistsoftwolatest1200VUltraFieldStop(UFS) IGBTsinahalf−b

NVG450A120L5DSC

Marking：N412DSC；Package：AHPM15-CEA；Automotive 1200 V, 450 A Dual Side Cooling Half-Bridge Power Module VE-Trac Dual NVG450A120L5DSC

ProductDescription TheNVG450A120L5DSCisamemberoftheVE−TracDualpower modulefamilywithdualsidecoolingandcompactfootprintsfor Hybrid(HEV)andElectricVehicle(EV)tractioninverterapplication. Themoduleconsistsoftwolatest1200VUltraFieldStop(UFS) IGBTsinahalf−b

STFN42

Marking：N42；Package：SOT-89；High voltage fast-switching NPN power transistor

Description Thisdeviceisahighvoltagefast-switchingNPN powertransistor,manufacturedusinghighvoltage multi-epitaxialplanartechnologyforhigh switchingspeeds. Itemploysacellularemitterstructurewithplanar edgeterminationtoenhanceswitchingspeeds, whilemaintainingaw

ZXTN2040F

Marking：N40；Package：SOT-23；SOT23 40 volt NPN silicon planar medium power transistor

Description Thistransistorcombineshighgain,highcurrentoperationandlowsaturationvoltagemakingitidealforpowerMOSFETgatedrivingandlowlosspowerswitching. Features ■Lowsaturationvoltageforreducedpowerdissipation ■1to2amphighcurrentcapability ■Pb-free ■SOT23

AZ431AN-ATR

Marking：N41；Package：SOT-23-3；Programmable Precise Output Voltage from 2.5V to 36V or 18V

AZ431AN-BTR

Marking：N44；Package：SOT-23-3；Programmable Precise Output Voltage from 2.5V to 36V or 18V

AZ431BN-ATR

Marking：N42；Package：SOT-23-3；Programmable Precise Output Voltage from 2.5V to 36V or 18V