丝印：N2014；Package：DFN2/2；N-Channel Enhancement Mode Power MOSFET

Description The G2014 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：785.48 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：N2014；Package：DFN2/2；N-Channel Enhancement Mode Power MOSFET

Description The G2014A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application ⚫ Power switch ⚫ DC/DC converters

文件：845.42 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：N2002；Package：TSSOP8；Bidirectional voltage level translator for open-drain and push-pull applications

1 General description The NVT2001/02 are bidirectional voltage level translators operational from 1.0 V to 3.6 V (Vref(A)) and 1.8 V to 5.5 V (Vref(B)), which allow bidirectional voltage translations between 1.0 V and 5 V without the need for a direction pin in open-drain or push-pull application

文件：542.81 Kbytes 页数：32 Pages

恩XP

丝印：N2004AS；Package：SOP-8；N-Channel Enhancement Mode Field Effect Transistor

文件：744.99 Kbytes 页数：6 Pages

ADV

爱德微

丝印：N2005AS；Package：SOP-8；N-Channel Enhancement Mode Field Effect Transistor

文件：1.026869 Mbytes 页数：6 Pages

ADV

爱德微

丝印：N2012；Package：DFNWB2X2-6L-J；N-Channel MOSFET

文件：536.02 Kbytes 页数：4 Pages

FS

丝印：N2012A；Package：DFN2020-6L；N-Channel Enhancement Mode Field Effect Transistor

文件：535.85 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

以太网电缆

EATON

伊顿

以太网电缆

EATON

伊顿

以太网电缆

EATON

伊顿