丝印：N2014；Package：DFN2/2；N-Channel Enhancement Mode Power MOSFET

Description The G2014A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application ⚫ Power switch ⚫ DC/DC converters

文件：845.42 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：N2002；Package：TSSOP8；Bidirectional voltage level translator for open-drain and push-pull applications

1 General description The NVT2001/02 are bidirectional voltage level translators operational from 1.0 V to 3.6 V (Vref(A)) and 1.8 V to 5.5 V (Vref(B)), which allow bidirectional voltage translations between 1.0 V and 5 V without the need for a direction pin in open-drain or push-pull application

文件：542.81 Kbytes 页数：32 Pages

恩XP

丝印：N2004AS；Package：SOP-8；N-Channel Enhancement Mode Field Effect Transistor

文件：744.99 Kbytes 页数：6 Pages

ADV

爱德微

丝印：N2005AS；Package：SOP-8；N-Channel Enhancement Mode Field Effect Transistor

文件：1.026869 Mbytes 页数：6 Pages

ADV

爱德微

丝印：N2012；Package：DFNWB2X2-6L-J；N-Channel MOSFET

文件：536.02 Kbytes 页数：4 Pages

FS

丝印：N2012A；Package：DFN2020-6L；N-Channel Enhancement Mode Field Effect Transistor

文件：535.85 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

以太网电缆

EATON

伊顿

以太网电缆

EATON

伊顿

以太网电缆

EATON

伊顿

包装：散装 类别：电缆组件 模块化电缆 描述：CABLE MOD 8P8C PLUG TO PLUG 1'

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