NVTFWS010N10MCLTAG

Marking：N10W；Package：WDFN8；MOSFET - Power, Single N-Channel 100 V, 10.6 m, 57.8 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •NVTFWS010N10MCLTAG−WettableFlanksProduct •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

PBRN113ES

Marking：N113ES；Package：SC-43A；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

PBRN113ZS

Marking：N113ZS；Package：SC-43A；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PBRN123ES

Marking：N123ES；Package：SC-43A；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PBRN123YS

Marking：N123YS；Package：SC-43A；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

SI2301CDS

Marking：N1***；Package：SOT-23；P-Channel 20-V (D-S) MOSFET

Description:P-Channel,20-V(D-S)MOSFET Package:SOT-23 PinOut:Identical

STN1N20

Marking：N1N20；Package：SOT-223；N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET

Description ThisdeviceisanN-channelPowerMOSFET developedusingthelatesthighvoltageMESH OVERLAY™process.ThenewpatentedSTrip layoutcoupledwiththecompany’sproprietary edgeterminationstructure,makesitsuitablein convertersforlightingapplications. Features ■100a

UMN11N

Marking：N11；Package：SOT-363；Switching diode

FEATURES 1)AWIDEVARIETYOFCONFIGURATIONSAREAVAILABLE.(UMD5,UMD6,SMD5,SMD6) 2)MULTIPLEDIODESINONESMALLSURFACEMOUNTPACKAGE. 3)DIODECHARACTERISTICSAREMATCHEDINTHEPACKAGE. Applications Ultrahighspeedswitching

1.0SMB10CA

Marking：N10E；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

1.0SMB10CA

Marking：N10E；Package：DO-214AA；Surface Mount Transient Voltage Suppressors