ESD15V23T-LA

Marking：N15；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 168~350WattsPeakPulsePowerperLine(tp=8/20μs) ProtectstwounidirectionalI/Olines ProtectsonebidirectionalI/Oline Workingvoltage:3.3~24V Lowclampingvoltage Lowleakagecurrent IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-2(ESD)±25kV(air),±20kV(contact):3.3V~8V IE

ESD15V23TS-LA

Marking：N15；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 168~350WattsPeakPulsePowerperLine(tp=8/20μs) ProtectstwounidirectionalI/Olines ProtectsonebidirectionalI/Oline Lowclampingvoltage WorkingVoltages:3.3V~24V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs

IMN10

Marking：N10；Package：SOT-457；Switching diode

FEATURES 1)AWIDEVARIETYOFCONFIGURATIONSAREAVAILABLE.(UMD5,UMD6,SMD5,SMD6) 2)MULTIPLEDIODESINONESMALLSURFACEMOUNTPACKAGE. 3)DIODECHARACTERISTICSAREMATCHEDINTHEPACKAGE. Applications Ultrahighspeedswitching

IMN10-T108

Marking：N10；Package：SOT-457；Switching Diode

Features Highreliability Smallmoldtype HighSpeedswitching Application Highspeedswitching

IMN11

Marking：N11；Package：SOT-457；Switching diode

FEATURES 1)AWIDEVARIETYOFCONFIGURATIONSAREAVAILABLE.(UMD5,UMD6,SMD5,SMD6) 2)MULTIPLEDIODESINONESMALLSURFACEMOUNTPACKAGE. 3)DIODECHARACTERISTICSAREMATCHEDINTHEPACKAGE. Applications Ultrahighspeedswitching

NEX90515APA-Q100

Marking：N133P；Package：HTSSOP8；150 mA, 40 V ultra-low Iq (5.3 μA) low-dropout voltage regulator

1.Generaldescription TheNEX90515-Q100deviceisalow-dropout(LDO) linearregulatordesignedforapplicationswithinput voltagesofupto40V.Itfeaturesatypicalquiescent current(IQ)ofonly5.3μAatlightloadandatypical shutdowncurrent(ISHUT)of300nAwhendisabled. This

NEX90515BPA-Q100

Marking：N150P；Package：SOT8062-1；150 mA, 40 V ultra-low Iq (5.3 μA) low-dropout voltage regulator

1.Generaldescription TheNEX90515-Q100deviceisalow-dropout(LDO) linearregulatordesignedforapplicationswithinput voltagesofupto40V.Itfeaturesatypicalquiescent current(IQ)ofonly5.3μAatlightloadandatypical shutdowncurrent(ISHUT)of300nAwhendisabled. This

NVTFS010N10MCLTAG

Marking：N10L；Package：WDFN8；MOSFET - Power, Single N-Channel 100 V, 10.6 m, 57.8 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •NVTFWS010N10MCLTAG−WettableFlanksProduct •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTFWS010N10MCLTAG

Marking：N10W；Package：WDFN8；MOSFET - Power, Single N-Channel 100 V, 10.6 m, 57.8 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •NVTFWS010N10MCLTAG−WettableFlanksProduct •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

PBRN113ES

Marking：N113ES；Package：SC-43A；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance