InGaAs/InP PIN Photodiode Chips

DESCRIPTION Microsemi’s InGaAs/InP PIN Photodiode chips are ideal for wide bandwidth 1310nm and 1550nm optical networking applications. KEY FEATURES Low Dark Current Extremely low capacitance Wide bandwidth Fast response time PPLICATIONS/BENEFIT 1310nm Fiber Optic Appli

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MICROSEMI

美高森美

Legacy Power Management

Description:Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications.The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively tested

Microchip

微芯科技

Universal Timeslot Interchange

FEATURES • Timeslot interchange between local and expansion buses • Architecture optimized for call processing environments: SCbus™, MVIP® and ST-BUS Compatible • Full switching between any of: – 128 local bus input SI timeslots – 128 local bus output SO timeslots – up to 2048 ex

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PHI

PHI

VHF~UHF WIDE BAND AMPLIFIER APPLICATIONS

VHF~UHF Wide Band Amplifier Applications Features • Band width : 700 MHz (min) @3dB down • Low noise: 4dB (typ.) @f = 400 MHz • Small package

文件：140.03 Kbytes 页数：4 Pages

TOSHIBA

东芝

FET BIAS CONTROLLER

DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components. FEATURES • Provides bias for GaAs and HEMT FETs • Drives up to four or s

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ZETEX