Photo Transistor Chip

Features • Light Activated Photo Transistor Chip • Planar NPN • Aluminum Wire bondable • Backside Metallization - Gold • Die Attach methods: Eutectic or Epoxy

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MICROSEMI

美高森美

Photo Transistor Chip

Microchip

微芯科技

GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters

Features ● GaAs infrared emitting diodes, fabricated in a liquid phase epitaxy process ● Good linearity (Ie = f [IF]) at high currents ● High efficiency ● High reliability ● High pulse handling capability ● SFH 415: Same package as SFH 300, SFH 203 Applications ● IR remote control of hi-fi

文件：47.43 Kbytes 页数：5 Pages

SIEMENS

西门子

GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters

Features ● GaAs infrared emitting diodes, fabricated in a liquid phase epitaxy process ● Good linearity (Ie = f [IF]) at high currents ● High efficiency ● High reliability ● High pulse handling capability ● SFH 415: Same package as SFH 300, SFH 203 Applications ● IR remote control of hi-fi

文件：47.43 Kbytes 页数：5 Pages

SIEMENS

西门子

NPN SILICON PLANAR AVALANCHE TRANSISTOR

NPN SILICON PLANAR AVALANCHE TRANSISTOR FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators * Su

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ZETEX