MWIC930GN数据手册恩XP中文资料规格书

描述 Description

The MWIC930NR1 and MWIC930GNR1 wideband integrated circuits are designed for CDMA and GSM/GSM EDGE applications. They use Our newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrate a multi–stage structure. Their wideband On-Chip integral matching circuitry makes them usable from 790 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N–CDMA and W–CDMA.

特性 Features

Final Application
• Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 30 Watts P1dB, Full Frequency Band (921–960 MHz)Power Gain: 30 dBPower Added Efficiency: 45%
Driver Application
• Typical Single–Carrier N–CDMA Performance: VDD = 27 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 Watts Avg., Full Frequency Band (865–894 MHz), IS–95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13),Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.Power Gain: 31 dBPower Added Efficiency: 21%ACPR @ 750 kHz Offset:  –52 dBc in 30 kHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• On-Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
• On-Chip Current Mirror gm Reference FET for Self Biasing Application
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.