MWE6IC9100N数据手册恩XP中文资料规格书

描述 Description

MWE6IC9100NR1 in Lifetime Buy. Last Order Date: 01 Jul 2011. Last Ship Date: 30 Jun 2012. View replacement parts via Part Number Search.

特性 Features

Final Application
• Typical GSM Performance: VDD = 26 Volts, IDQ1 = 120 mA, IDQ2 = 950 mA, Pout = 100 Watts CW, f = 960 MHzPower Gain: 33.5 dBPower Added Efficiency: 54%
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA,IDQ2 = 870 mA, Pout = 50 Watts Avg., Full Frequency Band (869–960 MHz)Power Gain: 35.5 dBPower Added Efficiency: 39%Spectral Regrowth @ 400 kHz Offset = –63 dBcSpectral Regrowth @ 600 kHz Offset = –81 dBcEVM: 2% rms
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness
• Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 120 W CW Pout.
• Characterized with Series Equivalent Large–Signal Impedance Parametersand Common Source Scattering Parameters
• On-Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.