MWIC930数据手册恩XP中文资料规格书

描述 Description

OverviewReplaced by MWIC930NR1(GNR1). There are no form, fit or function changes with this part replacement. The MWIC930R1 and MWIC930GR1 wideband integrated circuits are designed for CDMA and GSM/GSM EDGE applications. They use Our newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrate a multi–stage structure. Their wideband On-Chip integral matching circuitry makes them usable from 790 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N–CDMA and W–CDMA.

特性 Features

Final Application
•Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA,
IDQ2 = 240 mA, Pout = 30 Watts P1dB, Full Frequency Band (921–960 MHz)
Power Gain: 30 dB
Power Added Efficiency: 45%



Driver Application
•Typical Single–Carrier N–CDMA Performance: VDD = 27 Volts,
IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 Watts Avg., Full Frequency
Band (865–894 MHz), IS–95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13),
Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain: 31 dB
Power Added Efficiency: 21%
\tACPR @ 750 kHz Offset:  –52 dBc in 30 kHz Bandwidth



•Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output Power

•Characterized with Series Equivalent Large-Signal Impedance Parameters

•On-Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output)

•Integrated Quiescent Current Temperature Compensation with Enable/Disable Function

•On-Chip Current Mirror gm Reference FET for Self Biasing Application

•Integrated ESD Protection

•200°C Capable Plastic Package

•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.