RF Power Field Effect Transistor

文件：550.65 Kbytes 页数：13 Pages

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RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

1-2000 MHz, 4 W, 28 V LATERAL N-CHANNEL RF POWER MOSFET Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA

文件：527.99 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

文件：496.37 Kbytes 页数：13 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

文件：550.65 Kbytes 页数：13 Pages

恩XP

RF Power Field Effect Transistor

文件：496.37 Kbytes 页数：13 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Lateral N-Channel RF Power MOSFET, 1-2000 MHz, 4 W, 28 V

The MW6S004NT1 is designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEPPower Gain: 18 dBDrain Efficiency: 33%IMD: –34 dBc\n• Typical Two-Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEPPower Gain: 19 dBDrain Efficiency: 33%IMD: –39 dBc\n• Capable of Handling;

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