RF LDMOS Wideband Integrated Power Amplifiers

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FREESCALEFreescale Semiconductor, Inc

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RF LDMOS Wideband Integrated Power Amplifiers

文件：693.36 Kbytes 页数：16 Pages

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1805-1990 MHz, 20 W, 26 V, GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers

OverviewReplaced by MW4IC2020NBR1(GNBR1). There are no form, fit or function changes with this part replacement. The MW4IC2020MBR1 and MW4IC2020GMBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 1600 to 2400 MHz. This multi-stage structure is rated for 2 \n•Typical Two–Tone Performance: VDD = 26 Volts, \n•Typical GSM EDGE Performance: VDD = 26 Volts, \n•Typical CDMA Performance:VDD = 26 Volts, \n•Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW Output Power\n•Stable into a 3:1 VSWR. All Spurs Below –60 dBc @ 100 mW to 8 W CW Pout.\n•Char;

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1805-1990 MHz, 20 W, 26 V, GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers

The MW4IC2020NB/GNB wideband integrated circuit is designed with on-chip matching that makes it usable from 1600 to 2400 MHz. This multi-stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base\nstation modulation formats. \nFinal Application\nTypical Two–Tone Performance: VDD = 26 Volts, \n\tIDQ1 = 80 mA, \n\tIDQ2 = 200 mA,\n\tIDQ3 = 300 mA, Pout = 20 Watts PEP, Full Frequency Band\nPower Gain: 29 dB\nIMD: –32 dBc\nDrain Efficiency: 26% (at 1805 MHz) and 20% (at 1990 MHz)\n\n\t\nDriver Applications\nTypical G;

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