RF LDMOS Wideband Integrated Power Amplifiers

文件：582.99 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

RF LDMOS Wideband Integrated Power Amplifiers

文件：694.25 Kbytes 页数：16 Pages

恩XP

1805-1990 MHz, 20 W, 26 V, GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers

OverviewReplaced by MW4IC2020NBR1(GNBR1). There are no form, fit or function changes with this part replacement. The MW4IC2020MBR1 and MW4IC2020GMBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 1600 to 2400 MHz. This multi-stage structure is rated for 2 \n•Typical Two–Tone Performance: VDD = 26 Volts, \n•Typical GSM EDGE Performance: VDD = 26 Volts, \n•Typical CDMA Performance:VDD = 26 Volts, \n•Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW Output Power\n•Stable into a 3:1 VSWR. All Spurs Below –60 dBc @ 100 mW to 8 W CW Pout.\n•Char;

恩XP

RF LDMOS Wideband Integrated Power Amplifiers

文件：582.99 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

RF LDMOS Wideband Integrated Power Amplifiers

文件：582.99 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉