RF LDMOS Wideband Integrated Power Amplifiers

文件：693.36 Kbytes 页数：16 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

文件：693.36 Kbytes 页数：16 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifiers

文件：632.04 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

1805-1990 MHz, 20 W, 26 V, GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers

The MW4IC2020NB/GNB wideband integrated circuit is designed with on-chip matching that makes it usable from 1600 to 2400 MHz. This multi-stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base\nstation modulation formats. \nFinal Application\nTypical Two–Tone Performance: VDD = 26 Volts, \n\tIDQ1 = 80 mA, \n\tIDQ2 = 200 mA,\n\tIDQ3 = 300 mA, Pout = 20 Watts PEP, Full Frequency Band\nPower Gain: 29 dB\nIMD: –32 dBc\nDrain Efficiency: 26% (at 1805 MHz) and 20% (at 1990 MHz)\n\n\t\nDriver Applications\nTypical G;

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