Expandable Fanless Embedded Computer

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凌华科技

N-channel MOSFET 600V, 2A, 4.4Ω

Description The N6002NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.4Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low input capacitance Ciss = 400pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±2.0

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RENESAS

瑞萨

60W Open Frame Single Output

[YCL] Feature: ● 90 to 264Vac universal input range. ● UL/CUL, TUV, CB safety meet(approval). ● EMI/RFI meet VDE & FCC limit B. ● Low cost & compact size. ● 60Watts in127´76.2´44.1mm Size. 2 Year Warranty.

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Self?뭁rotected FET with Temperature and Current Limit

Self−Protected FET with Temperature and Current Limit 65 V, 6.5 A, Single N−Channel, DPAK HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating sm

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ONSEMI

安森美半导体