Self?뭁rotected FET with Temperature and Current Limit

Self−Protected FET with Temperature and Current Limit 65 V, 6.5 A, Single N−Channel, DPAK HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating sm

文件：67.34 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Self?뭁rotected FET with Temperature and Current Limit

Self−Protected FET with Temperature and Current Limit 65 V, 6.5 A, Single N−Channel, DPAK HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating sm

文件：67.34 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Self?뭁rotected FET with Temperature and Current Limit

Self−Protected FET with Temperature and Current Limit 65 V, 6.5 A, Single N−Channel, DPAK HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating sm

文件：67.34 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

自我保护 MOSFET 65 V，11 A，210 mΩ 单 N 沟道，带温度和电流限值

NID6002N 属于先进的功率 MOSFET 系列，使用安森美半导体最新的智能 MOSFET 技术工艺。集成的温度和电流限值一起提供短路保护。该器件具有集成的漏极-门极箝位，使其能够耐受雪崩模式下的高能量。该箝位还可针对非预期的瞬变电压提供附加安全裕度。静电 (ESD) 保护通过集成的门极-源极箝位提供。 • Short circuit protection \n• Over-temperature protection with automatic restart\n• Gate-Drain clamp;

ONSEMI

安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHANNEL 1:1 DPAK

ONSEMI

安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHANNEL 1:1 DPAK

ONSEMI

安森美半导体