首页 >MVA0302P-T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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P-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING DESCRIPTION TheN0302Pisaswitchingdevice,whichcanbedrivendirectlybya4.0Vpowersource. ThisN0302Pfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •4.0Vdriv | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORFORSWITCHING | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
P-Channel30V(D-S)MOSFET FEATURES TrenchFET®PowerMOSFET 100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
ComplementaryThermalTrakTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
ComplementaryThermalTrakTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconPNPtransistorinaTO-3PPlasticPackage. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
ComplementaryNPN-PNPPowerBipolarTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·HighCollector-EmitterBreakdownVoltage- :V(BR)CEO=250V(Min) ·GoodLinearityofhFE ·ComplementtoTypeNJW0302 ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforhighfidelityaudioamplifierand otherlinearap | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
180WattSiliconEpitaxialPlanarPNPTypePowerTransistor DESCRIPTION ·WithTO-3PB-SQpkg ·ComplementtotypeNJW0281A APPLICATIONS ·Poweramplifierapplications ·Recommendedfor150Whighfidelityaudio frequencyamplifieroutputstage | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | THINKISEMI | ||
ComplementaryNPN-PNPPowerBipolarTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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