首页 >MUR6040DCT>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSV POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSV POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast | ADPOW Advanced Power Technology | ADPOW | ||
UltrasonicFlowMetersforGasMeters GeneralDescription AS6040isanultrasonicflowconverter(UFC)solutiondedicatedtogasmeters,butsuitableforwatermeters,too.Thesystemismadeoffourmajorblocks:supervisor,frontend,postprocessingandinterface.Thesupervisormanagesalltasksandisthemasterofthewholesyst | SCIOSENSESciosense B.V. 感奥艾半导体 | SCIOSENSE | ||
UltrasonicFlowMetersforGasMeters GeneralDescription AS6040isanultrasonicflowconverter(UFC)solutiondedicatedtogasmeters,butsuitableforwatermeters,too.Thesystemismadeoffourmajorblocks:supervisor,frontend,postprocessingandinterface.Thesupervisormanagesalltasksandisthemasterofthewholesyst | SCIOSENSESciosense B.V. 感奥艾半导体 | SCIOSENSE | ||
DevelopmentKitUserGuide | SCIOSENSESciosense B.V. 感奥艾半导体 | SCIOSENSE | ||
DevelopmentKitUserGuide | SCIOSENSESciosense B.V. 感奥艾半导体 | SCIOSENSE | ||
Crystal | CTSCTS Electronic Components 西迪斯西迪斯公司 | CTS | ||
ChargerProtectionICwithInternalFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
SwitchedCapacitorVoltageConverterforCellular | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
JXND/嘉兴南电 |
TO-3P |
90000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
DONGHAI |
23+ |
TO-3P |
80000 |
原装正品,一级代理 |
询价 | ||
YANGJIE |
24+ |
TO-247AC |
50000 |
原厂直销全新原装正品现货 欢迎选购 |
询价 | ||
ON/安森美 |
23+ |
TO-247 |
10000 |
公司只做原装正品 |
询价 | ||
ON(安森美) |
6000 |
询价 | |||||
ON/安森美 |
TO-247 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
GS |
TO-3P |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
ON/安森美 |
23+ |
TO-247 |
6000 |
原装正品,支持实单 |
询价 | ||
ON(安森美) |
22+ |
NA |
8000 |
原厂原装现货 |
询价 | ||
ON(安森美) |
23+ |
NA |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 |
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