ULTRAFAST RECTIFIERS

ULTRAFAST SWITCHMODE POWER RECTIFIER ... designed for use in switching power supplies, inverters, and as free wheeling diodes. These state-of-the-art devices have the following features: ● Dual Diode Construction ● Low Leakage Current ● Low Forward Voltage ● 175°C Operating Junction Temperatu

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MOTOROLA

摩托罗拉

50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55 efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability. Features

文件：221.09 Kbytes 页数：6 Pages

ERICSSON

爱立信

Schottky Barrier Diode 15V, 1A Rectifier

Schottky Barrier Diode 15V, 1A Rectifier Features • Low forward voltage (IF=0.3A, VFmax=0.32V) (IF=0.5A, VFmax=0.35V). • Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm). Applications • High frequency rectification (switching regulators

文件：98.8 Kbytes 页数：3 Pages

SANYO

三洋

ULTRA FAST RECOVERY MODULES

Ultrafast Recovery Modules • Ultra Fast Recovery • 175°C Junction Temperature • VRRM 100 to 800 Volts • Electrically isolated base • 2 X 50 Amp current rating • ROHS Compliant

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MICROSEMI

美高森美