TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

文件：162.98 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 52A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.52 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

文件：166.17 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N?묬hannel Power MOSFET

文件：210.62 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件：1.31357 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N?묬hannel Power MOSFET

文件：212.67 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N?묬hannel Power MOSFET

文件：212.67 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N−Channel Power MOSFET

ONSEMI

安森美半导体

N−Channel Power MOSFET

ONSEMI

安森美半导体