MTP52N06V中文资料Motorola数据手册PDF规格书
MTP52N06V规格书详情
TMOS V™ Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM
TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density ofour
50 and 60 volt TMOS devices. Just as with our TMOSE–FET designs, TMOSV is designed to with stand high energy in the avalanche and commutation modes.
New Features of TMOS V
• On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on)Technology
• Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETS
• Avalanche Energy Specified
• IDSSand VDS(on)Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E–FET
产品属性
- 型号:
MTP52N06V
- 制造商:
MOTOROLA
- 制造商全称:
Motorola, Inc
- 功能描述:
TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
TO-220 |
6893 |
询价 | |||
MOT |
TO-220 |
5810 |
询价 | ||||
MOT |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | ||||
VBsemi/台湾微碧 |
TO |
399000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ON/安森美 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ON |
2021+ |
TO-220 |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
ON |
2020+ |
TO-220 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
ON |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
MOT |
23+ |
原装正品现货 |
10000 |
TO-220 |
询价 | ||
MOT |
23+ |
TO-220 |
150 |
全新原装正品现货,支持订货 |
询价 |