isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

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MOTOROLA

摩托罗拉

N-Channel 60 V (D-S) MOSFET

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VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

文件：1.31366 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N?묬hannel Power MOSFET

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ONSEMI

安森美半导体

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM

恩XP

N−Channel Power MOSFET

ONSEMI

安森美半导体